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Title: Synthesis and patterned growth on one-dimensional material
Other Titles: Mo ban sheng chang he cheng yi wei cai liao
Authors: Lai, Hau-ling (黎巧玲)
Department: Dept. of Biology and Chemistry
Degree: Master of Philosophy
Issue Date: 2000
Publisher: Dept. of Biology and Chemistry, City University of Hong Kong
Subjects: Nanostructured materials
Notes: CityU Call Number: TA418.9.N35 L5 2000
Includes bibliographical references (leaves 34-38)
Thesis (M.Phil.)--City University of Hong Kong, 2000
x, 50 leaves : ill. (some col.) ; 30 cm.
Type: Thesis
Abstract: For the last decade, one dimensional growth of materials was highly developed. Carbon nanotubes was first synthesized, other nanotubes, nanowires and nanorods were fabricated afterwards. Other than the synthesis, the properties of one dimensional materials were extremely investigated. It was found that their properties, such as electronic, mechanical and optical properties, are very outstanding, so electronic properties of one dimensional materials are attractive to many researchers. Because of the unique electronic properties, patterned electron field emission flat panel displays were prepared. Up to now, only patterned carbon nanotubes-based field-emission flat panel displays had been synthesized. Therefore, the patterned growth of one dimensional materials is important for preparing patterned field emission flat panel display. An ultimate goal of this research is to grow P-Sic nanorods by hot filament vapor deposition (HFCVD) and thermal evaporation with the powder mixture of silicon, silicon dioxide, and graphite. Silicon and silicon dioxide were used to evolve silicon monoxide vapor, which acted as silicon source. Graphite was as carbon source to form hydrocarbon orland carbon monoxide vapors. The P-Sic nanorods deposited by HFCVD were about 20-70 nm in diameter and about 1 pm in length, while the P-Sic nanorods prepared by thermal evaporation were about 20-40 mm in diameter and tens micrometers in length. The electron field emission measurement of the as-grown P-Sic nanorods was preformed. The turn-on field was 9VIpm at the current density of 0.01mA/cm2 .Furthermore, the patterned growth of carbon nanotubes and P-Sic nanorods on silicon were prepared by a simple and economical method. The desired pattern could be easily prepared by printing the pattern. This method is found to be more convenient and time-saving than any conventional ones. The patterned growth of carbon nanotubes and P-Sic nanorods will be developed to fabricate patterned field-emission flat panel display.
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