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|Title: ||2.45GHz PA/LNA/switch/antenna front-end|
|Authors: ||Ho, Kin Lun|
|Department: ||Department of Electronic Engineering|
|Issue Date: ||2007|
|Supervisor: ||Supervisor: Dr. Chan, Wing Shing; Assessor: Dr. Xue, Quen|
|Abstract: ||Recently, Data communication using 2.45GHz ISM band for wireless networks such as
Bluetooth, Wireless LAN, wireless video, audio has found widespread use for the last
few years. The RF amplifiers & antenna are the critical components in the RF front end
& are expected to provide a suitable output power at a very good gain with high
efficiency and linearity.
The amplifiers will be based on the components such as bipolar junction transistor, field
effect transistor & RFIC amplifier to see their characteristics & performances like output
power level, gain, linearity, efficiency, 1dB compression point & inter-modulation in
2.4~2.5GHz frequency ranges.
The switches circuit will use PIN diode for the design. We will see the insertion loss,
isolation & power handling. In the antenna design, we will look at some different designs
on their performance such as gain, standing wave ratio & efficiency.
In this project, we will use various procedures for the design from the concept to the
prototypes manufacturing through RF circuitry & antenna simulations to implementations.
Various procedures involved in the design of the Class A amplifier such as DC
simulation, bias point selection, input and output matching circuit design and the design
of a bias network are explained.|
|Appears in Collections:||Electronic Engineering - Undergraduate Final Year Projects|
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