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|Authors:||Wai, Miu Ching|
|Department:||Department of Electronic Engineering|
|Supervisor:||Supervisor: Dr. Chan, W S.; Assessor: Dr. Tsang, K F|
|Abstract:||Linearized 2GHz Class A and Class AB amplifiers by using parallel-configured BJT junction connected directly to the base of the main transistor are presented. At different biasing current levels, the linearization abilities of base-emitter and base-collector junctions of BJT for Class A amplifier are compared; it is found that BE-junction can linearize the amplifier at low biasing current level whilst BC-junction can linearize the amplifier at a wide range of biasing current levels, from relatively low to high. An optimum linearized 2GHz Class AB amplifier with more than 10dB reduction in the third-order intermodulation distortion and better power efficiency is shown.|
|Appears in Collections:||Electronic Engineering - Undergraduate Final Year Projects|
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