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Please use this identifier to cite or link to this item:
http://hdl.handle.net/2031/4832
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| Title: | Linearized amplifier |
| Authors: | Wai, Miu Ching |
| Department: | Department of Electronic Engineering |
| Issue Date: | 2007 |
| Supervisor: | Supervisor: Dr. Chan, W S.; Assessor: Dr. Tsang, K F |
| Abstract: | Linearized 2GHz Class A and Class AB amplifiers by using parallel-configured BJT
junction connected directly to the base of the main transistor are presented. At different
biasing current levels, the linearization abilities of base-emitter and base-collector
junctions of BJT for Class A amplifier are compared; it is found that BE-junction can
linearize the amplifier at low biasing current level whilst BC-junction can linearize the
amplifier at a wide range of biasing current levels, from relatively low to high. An
optimum linearized 2GHz Class AB amplifier with more than 10dB reduction in the
third-order intermodulation distortion and better power efficiency is shown. |
| Appears in Collections: | Electronic Engineering - Undergraduate Final Year Projects
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