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Title: Linearized amplifier
Authors: Wai, Miu Ching
Department: Department of Electronic Engineering
Issue Date: 2007
Supervisor: Supervisor: Dr. Chan, W S.; Assessor: Dr. Tsang, K F
Abstract: Linearized 2GHz Class A and Class AB amplifiers by using parallel-configured BJT junction connected directly to the base of the main transistor are presented. At different biasing current levels, the linearization abilities of base-emitter and base-collector junctions of BJT for Class A amplifier are compared; it is found that BE-junction can linearize the amplifier at low biasing current level whilst BC-junction can linearize the amplifier at a wide range of biasing current levels, from relatively low to high. An optimum linearized 2GHz Class AB amplifier with more than 10dB reduction in the third-order intermodulation distortion and better power efficiency is shown.
Appears in Collections:Electronic Engineering - Undergraduate Final Year Projects

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