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Please use this identifier to cite or link to this item:
http://hdl.handle.net/2031/5343
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| Title: | Short-circuit protection gate drive circuits for power electronics applications |
| Authors: | Ho, Siu Shing |
| Department: | Department of Electronic Engineering |
| Issue Date: | 2008 |
| Supervisor: | Supervisor: Prof. Hui, Ron S Y.; Assessor: Dr. Yan, W |
| Abstract: | The Insulated Gate Bipolar Transistor (IGBT) is used for the system with high supply voltage and current inductive load system such as large motor. The Short Circuit Protection is the most important strategy to protect the system again damage and danger caused. One of the methods to achieve the protection scheme is reduce the Gate-Emitter voltage when the short circuit fault condition is detected, on the other hand, it limits the current before successfully turned-off the IGBT. This project is focus on the protection scheme under the Hard Switch Fault (HSF) and Fault Under Load (FUL) conditions. |
| URI: | http://hdl.handle.net/2031/5343 |
| Appears in Collections: | Electronic Engineering - Undergraduate Final Year Projects
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