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|Title: ||Controlled fabrication, characterization and properties of one-dimensional semiconductor nanostructures from and on metal substrates|
|Other Titles: ||Jin shu ji di shang yi wei ban dao ti na mi jie gou de ke kong he cheng, biao zheng he xing neng|
|Authors: ||Qian, Guixiang (錢桂香)|
|Department: ||Department of Physics and Materials Science|
|Degree: ||Doctor of Philosophy|
|Issue Date: ||2009|
|Publisher: ||City University of Hong Kong|
|Subjects: ||Low-dimensional semiconductors.|
|Notes: ||CityU Call Number: QC611.8.L68 Q25 2009|
xviii, 133 leaves : ill. 30 cm.
Thesis (Ph.D.)--City University of Hong Kong, 2009.
Includes bibliographical references.
|Abstract: ||One–dimensional (1D) semiconductor nanostructures such as nanowires, nanorods,
nanoribbons, and nanotubes have received increasing attention and become the focus of
intensive research in recent years due to their unique 1D structures and possible
quantum confinement effects. They provide a good platform and system to investigate
the properties of nanomaterials and the dependence on dimension and morphology in
order to steer device design and related applications. Hence, fabrication of 1D
nanostructures with controlled size and morphology is critical from the perspective of
both scientific research and technological development.
1D semiconductor nanomaterials with different compositions and structures have
been reported. Two main strategies, namely vapor phase and solution phase
techniques, are widely employed. In comparison with the high–temperature
vapor–phase methodology, the low–temperature solution–phase approach is inexpensive,
simple, and low energy–consuming. Thus, solution–phase approaches have been
developed to fabricate various types 1D semiconductor nanostructures.
The aims of the research work in this thesis are the following: (i) to achieve
controlled growth of 1D semiconductors on suitable substrates to meet the requirements
of electrical and optoelectrical applications, (ii) to investigate their properties and
characteristics of the 1D nanostructures such as morphology, structure, and size, and (iii) to develop and design the assembly of 1D nanostructures as building blocks in
nanoscale devices in electronic, optoelectronic, and electrochemical applications.
Especially, 1D semiconductor nanostructures of ZnS, CdS, and Cu2S were grown on Zn,
Cd, and brass substrates using solvothermal methods, respectively. In this technique,
metal foils serve as both the source materials and substrates. The growth conditions of
these 1D nanostructures were varied to determine the optimal ones. Due to direct
synthesis and assembly of 1D nanostructures on electrically conductive metal substrates,
these nanostructures may be used as an electrode in electrical and optoelectronic devices
without post–processing. Thus, we characterized the fabricated 1D nanostructures and
found improved electrical and optoelectrical performances. Their growth mechanisms
were studied. The work is hence prepared for their future applications.
This thesis is organized into four parts as described in the following. Firstly,
quasi–aligned ZnS nanowire arrays with diameters of 5–15 nm and lengths of up to
micrometers are fabricated directly on Zn foils by the solvothermal approach. These
ZnS nanowires have a hexagonal structure and a growth direction of . As the
Bohr diameter of bulk ZnS is about 5 nm, those ultrafine nanowires with diameters of
several nanometers may possess more useful and unique physical and chemical
properties due to the quantum confinement effect. By systematically investigating the
influence of the reaction time, temperature, and solvent on the morphology and
composition of the products, the growth mechanism of the ultrafine nanowire arrays is
proposed. Field emission measurements disclose a turn–on field of about 5.4 V/μm at a current density of 10 μA/cm2. The good electron emission properties may be
attributed to the small diameter, good alignment, direct contact, and adhesion on the
electrically conductive metal substrates.
Secondly, in situ growth of aligned CdS nanowire arrays is achieved on Cd metal
foils at 160 oC via a simple solvothermal method using sulfur powders as the sulfur
source and ethylenediamine as the solvent without the use of catalysts or templates.
The single–crystalline CdS nanowires with uniform diameters of 20–40 nm have
coalescent ends. The photoluminescence (PL) and Raman spectra disclose the optical
properties of the products and the possible growth mechanism is suggested. The
electron field emission properties are also investigated and analyzed. The screening
effect is observed to play a vital role in the field emission properties due to the
coalescent ends of the nanowires.
Thirdly, Cu2S nanostructures with wire–like, sheet–like, and hierarchical
geometries are produced via similar solvothermal routes on brass substrates at different
conditions including different sulfur sources and alkalinity.
Finally, such strategy is also applied successfully to the direct synthesis of titanate
nanostructures with different morphology and size on Ti foils with the assistance of the
surfactant. The possible growth mechanism in different reaction stages is tracked by a
series of preliminary comparative experiments.|
|Online Catalog Link: ||http://lib.cityu.edu.hk/record=b2374830|
|Appears in Collections:||AP - Doctor of Philosophy |
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