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|Title: ||Realization of integrated photonic devices using silicon-based materials and microfabrication technology|
|Other Titles: ||Jian ji yu xi cai liao he wei zhi zao gong yi de ji cheng guang qi jian|
|Authors: ||Wong, Chun Keung (黃俊強)|
|Department: ||Department of Electronic Engineering|
|Degree: ||Doctor of Philosophy|
|Issue Date: ||2009|
|Publisher: ||City University of Hong Kong|
Silicon -- Optical properties.
|Notes: ||CityU Call Number: TA1520 .W66 2009|
xxi, 135 leaves : ill. 30 cm.
Thesis (Ph.D.)--City University of Hong Kong, 2009.
Includes bibliographical references.
|Abstract: ||The advances in Si technology and the rapid growth of broadband communication
via optical fiber allow silicon integrated photonics to begin revolutionizing the electronic
devices, circuits, and systems. The successful development of Si integrated photonics will
enable on-chip optical interconnects for future microprocessor and giga-scale circuits,
chip-to-chip fiber interconnection and will greatly decrease the cost for fiber-to-home
connection. This will be one of the major moves for the next technology revolution.
In this study, low optical loss silicon-based dielectrics were prepared using the
microfabrication techniques. The materials were used to realize low-loss optical
waveguide devices for integrated optic applications. The waveguide devices realized
using these techniques have feature of low propagation loss and small size.
This work further demonstrated that the silicon oxide-based nanocrystal structures
can be good candidates for light-emitting devices at room temperature. The bonding
structure and the optical properties of silicon-rich silicon oxide films, which were
prepared using plasma-enhanced chemical vapor deposition (PECVD) with thermal
oxidation, have been studied in detail. The composition and bonding structures have been
explored using both Fourier transform infrared (FTIR) spectroscopy and X-ray
photoelectron spectroscopy (XPS). The luminescent properties were studied using Raman
spectroscopy and photoluminescence (PL) measurements. Results show that hightemperature
(~1000 oC) annealing of as-deposited Si-rich silicon oxide gives rise to phase
separation and formation of crystalline Si phases in the oxide films.
This work has demonstrated the viable technology for making waveguide structures
and optical components from Si-based materials. Visible light was obtained from Sibased
the insulator-embedded Si nanoclusters. These achievements provide useful
fundamentals for the development of future silicon integrated photonics.|
|Online Catalog Link: ||http://lib.cityu.edu.hk/record=b2375043|
|Appears in Collections:||EE - Doctor of Philosophy |
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