Please use this identifier to cite or link to this item:
http://dspace.cityu.edu.hk/handle/2031/7432
Title: | Electroless Ni-P-ZrO2 metallization for lead-free solder interconnection |
Authors: | Hu, Xiao (胡驍) Chan, Y. C. |
Department: | Department of Electronic Engineering |
Issue Date: | Aug-2014 |
Award: | Won the JCAP Outstanding Paper Award in the 2014 15th International Conference on Electronic Packaging Technology (ICEPT 2014), 12-15 August 2014 organized by the Electronic Manufacturing & Packaging Technology Society of the Chinese Institute of Electronics, China, and University of Electronic Science and Technology of China. |
Supervisor: | Prof. Chan, Yan Cheong |
Description: | The award winning work was published: Hu, X., & Chan, Y. C. (2014). Electroless Ni-P-ZrO2 metallization for lead-free solder interconnection. International Conference on Electronic Packaging Technology (ICEPT), 15, 820-824. doi: 10.1109/ICEPT.2014.6922774. |
Type: | Conference paper/presentation |
Abstract: | Lead-free solder alloy is popular in electronic industry due to its environmental friendly characteristic. However, the interfacial reaction faces the thermal challenge caused by the increased melting temperature of lead-free solder alloy. In the present work, a composite Ni-P-ZrO2 (15 at.% of P) layer was developed by electroless plating as novel under bump metallization (UBM). In order to homogeneously disperse ZrO2 nanoparticle in the Ni-P layer, ultrasonic vibration and magnetic stirring were adopted. The interfacial reaction between electroless Ni–P–ZrO2 layer and lead-free solder alloy was systematically investigated by scanning electronic microscopy (SEM) with EDX. The microstructure shows Ni3Sn4 layers growth at a lower rate in solder/Ni-P-ZrO2 joint compared with solder/Ni-P joint. The top-view intermetallic compounds (IMCs) layer in ZrO2 doped sample demonstrated a refined grain size. The consumption rate of amorphous UBM to crystalline Ni3P phase is limited in solder/Ni-P-ZrO2 joint due to the ZrO2 nanoparticle addition. Moreover, the ZrO2 nanoparticle doped sample consistently demonstrated higher shear strength than plain solder joint as a function of the number of reflow cycles. Therefore, Ni-P-ZrO2 UBM not only suppress the excess growths of IMC layer but also helps to reinforce the mechanical property of solder joint, thus improve the reliability of the interconnect. |
Appears in Collections: | Student Works With External Awards |
Files in This Item:
File | Size | Format | |
---|---|---|---|
award_winning_work.html | 161 B | HTML | View/Open |
Items in Digital CityU Collections are protected by copyright, with all rights reserved, unless otherwise indicated.