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DC Field | Value | Language |
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dc.contributor.author | Hu, Xiao (胡驍) | en_US |
dc.contributor.author | Chan, Y. C. | en_US |
dc.date.accessioned | 2014-11-06T09:42:22Z | |
dc.date.accessioned | 2017-09-19T09:19:14Z | |
dc.date.accessioned | 2019-02-12T08:40:57Z | - |
dc.date.available | 2014-11-06T09:42:22Z | |
dc.date.available | 2017-09-19T09:19:14Z | |
dc.date.available | 2019-02-12T08:40:57Z | - |
dc.date.issued | 2014-08 | en_US |
dc.identifier.other | ee2014-007 | en_US |
dc.identifier.uri | http://144.214.8.231/handle/2031/7432 | - |
dc.description | The award winning work was published: Hu, X., & Chan, Y. C. (2014). Electroless Ni-P-ZrO2 metallization for lead-free solder interconnection. International Conference on Electronic Packaging Technology (ICEPT), 15, 820-824. doi: 10.1109/ICEPT.2014.6922774. | en_US |
dc.description.abstract | Lead-free solder alloy is popular in electronic industry due to its environmental friendly characteristic. However, the interfacial reaction faces the thermal challenge caused by the increased melting temperature of lead-free solder alloy. In the present work, a composite Ni-P-ZrO2 (15 at.% of P) layer was developed by electroless plating as novel under bump metallization (UBM). In order to homogeneously disperse ZrO2 nanoparticle in the Ni-P layer, ultrasonic vibration and magnetic stirring were adopted. The interfacial reaction between electroless Ni–P–ZrO2 layer and lead-free solder alloy was systematically investigated by scanning electronic microscopy (SEM) with EDX. The microstructure shows Ni3Sn4 layers growth at a lower rate in solder/Ni-P-ZrO2 joint compared with solder/Ni-P joint. The top-view intermetallic compounds (IMCs) layer in ZrO2 doped sample demonstrated a refined grain size. The consumption rate of amorphous UBM to crystalline Ni3P phase is limited in solder/Ni-P-ZrO2 joint due to the ZrO2 nanoparticle addition. Moreover, the ZrO2 nanoparticle doped sample consistently demonstrated higher shear strength than plain solder joint as a function of the number of reflow cycles. Therefore, Ni-P-ZrO2 UBM not only suppress the excess growths of IMC layer but also helps to reinforce the mechanical property of solder joint, thus improve the reliability of the interconnect. | en_US |
dc.rights | This work is protected by copyright. Reproduction or distribution of the work in any format is prohibited without written permission of the copyright owner. | en_US |
dc.rights | Access is unrestricted. | en_US |
dc.title | Electroless Ni-P-ZrO2 metallization for lead-free solder interconnection | en_US |
dc.type | Conference paper/presentation | en_US |
dc.contributor.department | Department of Electronic Engineering | en_US |
dc.description.award | Won the JCAP Outstanding Paper Award in the 2014 15th International Conference on Electronic Packaging Technology (ICEPT 2014), 12-15 August 2014 organized by the Electronic Manufacturing & Packaging Technology Society of the Chinese Institute of Electronics, China, and University of Electronic Science and Technology of China. | en_US |
dc.description.fulltext | Award winning work is available. | en_US |
dc.description.supervisor | Prof. Chan, Yan Cheong | en_US |
Appears in Collections: | Student Works With External Awards |
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award_winning_work.html | 161 B | HTML | View/Open |
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