Skip navigation
Run Run Shaw Library City University of Hong KongRun Run Shaw Library

Please use this identifier to cite or link to this item: http://dspace.cityu.edu.hk/handle/2031/7432
Title: Electroless Ni-P-ZrO2 metallization for lead-free solder interconnection
Authors: Hu, Xiao (胡驍)
Chan, Y. C.
Department: Department of Electronic Engineering
Issue Date: Aug-2014
Award: Won the JCAP Outstanding Paper Award in the 2014 15th International Conference on Electronic Packaging Technology (ICEPT 2014), 12-15 August 2014 organized by the Electronic Manufacturing & Packaging Technology Society of the Chinese Institute of Electronics, China, and University of Electronic Science and Technology of China.
Supervisor: Prof. Chan, Yan Cheong
Description: The award winning work was published: Hu, X., & Chan, Y. C. (2014). Electroless Ni-P-ZrO2 metallization for lead-free solder interconnection. International Conference on Electronic Packaging Technology (ICEPT), 15, 820-824. doi: 10.1109/ICEPT.2014.6922774.
Type: Conference paper/presentation
Abstract: Lead-free solder alloy is popular in electronic industry due to its environmental friendly characteristic. However, the interfacial reaction faces the thermal challenge caused by the increased melting temperature of lead-free solder alloy. In the present work, a composite Ni-P-ZrO2 (15 at.% of P) layer was developed by electroless plating as novel under bump metallization (UBM). In order to homogeneously disperse ZrO2 nanoparticle in the Ni-P layer, ultrasonic vibration and magnetic stirring were adopted. The interfacial reaction between electroless Ni–P–ZrO2 layer and lead-free solder alloy was systematically investigated by scanning electronic microscopy (SEM) with EDX. The microstructure shows Ni3Sn4 layers growth at a lower rate in solder/Ni-P-ZrO2 joint compared with solder/Ni-P joint. The top-view intermetallic compounds (IMCs) layer in ZrO2 doped sample demonstrated a refined grain size. The consumption rate of amorphous UBM to crystalline Ni3P phase is limited in solder/Ni-P-ZrO2 joint due to the ZrO2 nanoparticle addition. Moreover, the ZrO2 nanoparticle doped sample consistently demonstrated higher shear strength than plain solder joint as a function of the number of reflow cycles. Therefore, Ni-P-ZrO2 UBM not only suppress the excess growths of IMC layer but also helps to reinforce the mechanical property of solder joint, thus improve the reliability of the interconnect.
Appears in Collections:Student Works With External Awards 

Files in This Item:
File SizeFormat 
award_winning_work.html161 BHTMLView/Open
Show full item record


Items in Digital CityU Collections are protected by copyright, with all rights reserved, unless otherwise indicated.

Send feedback to Library Systems
Privacy Policy | Copyright | Disclaimer